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| DSEP 2x25-12C HiPerDynFREDTM Epitaxial Diode with soft recovery IFAV = 2x25 A VRRM = 1200 V trr = 30 ns SOT-227 B, miniBLOC VRSM V 1200 VRRM V 1200 Type DSEP 2x 25-12C Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL Md Weight Test Conditions TC = 90C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 1.3 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 100 25 250 0.2 0.1 -40...+150 150 -40...+150 A A A mJ A C C C W V~ Nm/lb.in. Nm/lb.in. g Features * International standard package miniBLOC * Isolation voltage 2500 V~ * UL registered E 72873 * 2 independent FRED in 1 package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour Applications * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch TC = 25C 50/60 Hz, RMS, IISOL 1 mA mounting torque (M4) terminal connection torque (M4) typical 210 2500 1.1-1.5/9-13 1.1-1.5/9-13 30 Symbol IR Test Conditions VR = VRRM; TVJ = 25C TVJ = 150C IF = 25 A; TVJ = 125C TVJ = 25C Characteristic Values typ. max. 0.25 2.0 3.0 4.7 0.6 0.1 30 3.0 4.0 mA mA V V K/W K/W ns A VF RthJC RthCH trr IRM with heatsink compound IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 50 A; -diF/dt = 100 A/s; TVJ = 100C Dimensions see Outlines.pdf Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0% Pulse Width = 300 s, Duty Cycle < 2.0% Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2005 IXYS All rights reserved 1-2 0544 DSEP 2x25-12C 80 A 60 TVJ = 150C TVJ = 100C TVJ = 25C Qr 600 500 400 300 5 200 0 0 1 2 3 4 5 VF 6 V7 100 100 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt IF = 60 A IF = 30 A IF = 15 A 800 nC 700 25 TVJ = 100C VR = 600 V IRM 15 A 20 IF = 60 A IF = 30 A IF = 15 A TVJ = 100C VR = 600 V IF 40 10 20 Fig. 1 Forward current IF versus VF 2.5 160 ns 140 2.0 Kf 1.5 trr 120 100 80 IRM 0.5 40 Qrr 0.0 0 40 80 120 C 160 TVJ 20 60 Fig. 2 Reverse recovery charge Qr versus -diF/dt 40 TVJ = 100C VR = 600 V V 30 IF = 60 A IF = 30 A IF = 15 A VFR 20 Fig. 3 Peak reverse current IRM versus -diF/dt 0.6 TVJ = 100C IF = 100 A s 0.5 tfr 0.4 1.0 10 tfr 0.3 VFR 0 0 200 400 600 -diF/dt 800 A/s 1000 0 200 400 0.2 600 A/s 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR, tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 5 Rthi (K/W) 0.037 0.07 0.246 0.176 0.07 ti (s) 0.00024 0.0036 0.0235 0.142 0.7 ZthJC 0.1 0.01 0.001 DSEP 2x25-12C 0.01 0.1 1 t s 10 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. (c) 2005 IXYS All rights reserved 0544 2-2 |
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